Технічний опис IXFN34N100 IXYS
Description: MOSFET N-CH 1000V 34A SOT-227B, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 5.5V @ 8mA, Power Dissipation (Max): 700W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Інші пропозиції IXFN34N100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFN34N100 | IXYS |
 Description: MOSFET N-CH 1000V 34A SOT-227BInput Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 5.5V @ 8mA Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFN34N100 | IXYS |
MOSFET Modules 34 Amps 1000V 0.28 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFN34N100 |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 34A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 1000V 34A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXFN34N100 |
|
Виробник: IXYS
MOSFET Modules 34 Amps 1000V 0.28 Rds
MOSFET Modules 34 Amps 1000V 0.28 Rds
товару немає в наявності
В кошику
од. на суму грн.