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IXFN360N10T

IXFN360N10T IXYS


media-3319811.pdf Виробник: IXYS
Discrete Semiconductor Modules 360 Amps 100V
на замовлення 300 шт:

термін постачання 350-359 дні (днів)
Кількість Ціна без ПДВ
1+1990.99 грн
10+ 1744.49 грн
30+ 1458.6 грн
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Технічний опис IXFN360N10T IXYS

Description: MOSFET N-CH 100V 360A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V.

Інші пропозиції IXFN360N10T

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IXFN360N10T IXFN360N10T
Код товару: 92649
DS100088(IXFN360N10T).pdf Транзистори > IGBT
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IXFN360N10T IXFN360N10T Виробник : Littelfuse _mosfets_n-channel_trench_gate_ixfn360n10t_datasheet.pdf.pdf Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B
товар відсутній
IXFN360N10T IXFN360N10T Виробник : Littelfuse media.pdf Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B
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IXFN360N10T IXFN360N10T Виробник : IXYS IXFN360N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Technology: GigaMOS™; HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Pulsed drain current: 900A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.6mΩ
Gate charge: 525nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 130ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN360N10T IXFN360N10T Виробник : IXYS SEMICONDUCTOR 2362856.pdf Description: IXYS SEMICONDUCTOR - IXFN360N10T - MOSFET-Transistor, GigaMOS™, n-Kanal, 360A, 100V, 0.0026 Ohm, 100V, 4.5V, SOT-227B
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 360
Rds(on)-Messspannung Vgs: 100
Verlustleistung Pd: 830
Produktpalette: Trench HiperFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0026
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 4.5
SVHC: No SVHC (07-Jul-2017)
товар відсутній
IXFN360N10T IXFN360N10T Виробник : IXYS DS100088(IXFN360N10T).pdf Description: MOSFET N-CH 100V 360A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V
товар відсутній
IXFN360N10T IXFN360N10T Виробник : IXYS IXFN360N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Technology: GigaMOS™; HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Pulsed drain current: 900A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.6mΩ
Gate charge: 525nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 130ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній