на замовлення 300 шт:
термін постачання 350-359 дні (днів)
Кількість | Ціна без ПДВ |
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1+ | 1990.99 грн |
10+ | 1744.49 грн |
30+ | 1458.6 грн |
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Технічний опис IXFN360N10T IXYS
Description: MOSFET N-CH 100V 360A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V.
Інші пропозиції IXFN360N10T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFN360N10T Код товару: 92649 |
Транзистори > IGBT |
товар відсутній
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IXFN360N10T | Виробник : Littelfuse | Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B |
товар відсутній |
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IXFN360N10T | Виробник : Littelfuse | Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B |
товар відсутній |
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IXFN360N10T | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A Technology: GigaMOS™; HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Pulsed drain current: 900A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.6mΩ Gate charge: 525nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 130ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN360N10T | Виробник : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXFN360N10T - MOSFET-Transistor, GigaMOS™, n-Kanal, 360A, 100V, 0.0026 Ohm, 100V, 4.5V, SOT-227B Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 360 Rds(on)-Messspannung Vgs: 100 Verlustleistung Pd: 830 Produktpalette: Trench HiperFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0026 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 4.5 SVHC: No SVHC (07-Jul-2017) |
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IXFN360N10T | Виробник : IXYS |
Description: MOSFET N-CH 100V 360A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 505 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36000 pF @ 25 V |
товар відсутній |
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IXFN360N10T | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A Technology: GigaMOS™; HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Pulsed drain current: 900A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.6mΩ Gate charge: 525nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 130ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |