Технічний опис IXFN36N100 Littelfuse
Description: MOSFET N-CH 1KV 36A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V.
Інші пропозиції IXFN36N100
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IXFN36N100 | Виробник : Littelfuse |
 Trans MOSFET N-CH 1KV 36A 4-Pin SOT-227B |
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IXFN36N100 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 36A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.24Ω Pulsed drain current: 144A Power dissipation: 694W Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 380nC Reverse recovery time: 180ns Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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IXFN36N100 | Виробник : IXYS |
Description: MOSFET N-CH 1KV 36A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
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IXFN36N100 | Виробник : IXYS |
Discrete Semiconductor Modules 1KV 36A |
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IXFN36N100 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 36A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.24Ω Pulsed drain current: 144A Power dissipation: 694W Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 380nC Reverse recovery time: 180ns Gate-source voltage: ±30V Mechanical mounting: screw |
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