IXFN50N120SIC IXYS

Description: SICFET N-CH 1200V 47A SOT227B, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 2.4V @ 10mA, Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.