IXFN50N120SK IXYS
Виробник: IXYS
Description: SICFET N-CH 1200V 48A SOT227B
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
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Технічний опис IXFN50N120SK IXYS
Description: SICFET N-CH 1200V 48A SOT227B, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 2.8V @ 10mA, Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V.
Інші пропозиції IXFN50N120SK за ціною від 4832.25 грн до 7123.46 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXFN50N120SK | IXYS |
MOSFET Modules SiC Power MOSFET |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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IXFN50N120SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 48A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 50mΩ Technology: SiC Gate-source voltage: -5...20V Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Reverse recovery time: 54ns Gate charge: 115nC Kind of channel: enhancement |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
|
| IXFN50N120SK |
|
Виробник: IXYS
MOSFET Modules SiC Power MOSFET
MOSFET Modules SiC Power MOSFET
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5369.12 грн |
| 10+ | 4832.25 грн |
| IXFN50N120SK |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7123.46 грн |
| 3+ | 5847.70 грн |