Відгуки про товар
Написати відгук
Технічний опис IXFN52N100X IXYS
Description: MOSFET N-CH 1000V 44A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V.
Інші пропозиції IXFN52N100X
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFN52N100X | IXYS |
 Description: MOSFET N-CH 1000V 44A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 6V @ 4mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXFN52N100X | IXYS |
Category: Transistor modules Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.125Ω Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Gate charge: 245nC Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 260ns Pulsed drain current: 100A |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFN52N100X |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 44A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Description: MOSFET N-CH 1000V 44A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXFN52N100X |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
Category: Transistor modules
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Gate charge: 245nC
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Pulsed drain current: 100A
товару немає в наявності
В кошику
од. на суму грн.