IXFN60N60 IXYS

Description: MOSFET N-CH 600V 60A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.