IXFN66N85X IXYS
Виробник: IXYS
Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 1+ | 3011.96 грн |
| 10+ | 2176.71 грн |
| 100+ | 2008.44 грн |
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Технічний опис IXFN66N85X IXYS
Description: MOSFET N-CH 850V 65A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Інші пропозиції IXFN66N85X за ціною від 2564.53 грн до 3641.95 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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IXFN66N85X | IXYS |
MOSFET Modules 850V Ultra Junction X-Class Pwr MOSFET |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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IXFN66N85X | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A Case: SOT227B Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Kind of channel: enhancement Polarisation: unipolar Gate-source voltage: ±40V Reverse recovery time: 250ns Gate charge: 230nC On-state resistance: 65mΩ Technology: HiPerFET™; X-Class Drain current: 65A Pulsed drain current: 140A Drain-source voltage: 850V Power dissipation: 830W |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
|
| IXFN66N85X |
|
Виробник: IXYS
MOSFET Modules 850V Ultra Junction X-Class Pwr MOSFET
MOSFET Modules 850V Ultra Junction X-Class Pwr MOSFET
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3035.72 грн |
| 10+ | 2564.53 грн |
| IXFN66N85X |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 250ns
Gate charge: 230nC
On-state resistance: 65mΩ
Technology: HiPerFET™; X-Class
Drain current: 65A
Pulsed drain current: 140A
Drain-source voltage: 850V
Power dissipation: 830W
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 250ns
Gate charge: 230nC
On-state resistance: 65mΩ
Technology: HiPerFET™; X-Class
Drain current: 65A
Pulsed drain current: 140A
Drain-source voltage: 850V
Power dissipation: 830W
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3641.95 грн |