IXFN66N85X IXYS
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 230nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 230nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2436.25 грн |
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Технічний опис IXFN66N85X IXYS
Description: MOSFET N-CH 850V 65A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Інші пропозиції IXFN66N85X за ціною від 2194.62 грн до 2923.5 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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IXFN66N85X | Виробник : IXYS |
Description: MOSFET N-CH 850V 65A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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IXFN66N85X | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 65A Pulsed drain current: 140A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 65mΩ Gate charge: 230nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
на замовлення 12 шт: термін постачання 7-14 дні (днів) |
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IXFN66N85X | Виробник : Littelfuse | Trans MOSFET N-CH 850V 65A 4-Pin SOT-227B |
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