| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9711.49 грн |
| 10+ | 8682.00 грн |
| 50+ | 7548.88 грн |
| 100+ | 7529.55 грн |
| 200+ | 7507.46 грн |
| 500+ | 7490.89 грн |
| 1000+ | 7474.32 грн |
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Технічний опис IXFN70N120SK IXYS
Description: SICFET N-CH 1200V 68A SOT227B, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4V @ 15mA, Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V.
Інші пропозиції IXFN70N120SK
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFN70N120SK | IXYS |
 Description: SICFET N-CH 1200V 68A SOT227BDrain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4V @ 15mA Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFN70N120SK |
|
Виробник: IXYS
Description: SICFET N-CH 1200V 68A SOT227B
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 15mA
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
Description: SICFET N-CH 1200V 68A SOT227B
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 15mA
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.