IXFN75N120SK IXYS

Description: SIC AND MULTICHIP DISCRETE, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V, Vgs(th) (Max) @ Id: 3.6V @ 18mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V.