Технічний опис IXFN80N50
- MOSFET, N, SOT-227B
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:500V
- Cont Current Id:80A
- On State Resistance:0.055ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4.5V
- Case Style:ISOTOP
- Termination Type:Screw
- Avalanche Single Pulse Energy Eas:4J
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Junction Temperature Tj:150`C
- Max On State Resistance:0.055ohm
- Max Repetitive Avalanche Energy:64mJ
- Max Voltage Vds:500V
- Max Voltage Vgs th:4.5V
- Min Junction Temperature, Tj:-55`C
- N-channel Gate Charge:380nC
- No. of Transistors:1
- Power Dissipation:780W
- Power Dissipation Pd:780W
- Pulse Current Idm:320A
- Rate of Voltage Change dv / dt:5V/ns
- Typ Reverse Recovery Time, trr:250ns
- Weight:0.000036kg
- Transistor Case Style:ISOTOP
Інші пропозиції IXFN80N50
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFN80N50 | Виробник : Littelfuse |
 Trans MOSFET N-CH 500V 80A 4-Pin SOT-227B |
товар відсутній |
|
 |
IXFN80N50 | Виробник : Littelfuse |
Trans MOSFET N-CH 500V 80A 4-Pin SOT-227B |
товар відсутній |
|
 |
IXFN80N50 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Pulsed drain current: 320A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 380nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 300 шт |
товар відсутній |
|
 |
IXFN80N50 | Виробник : IXYS |
Description: MOSFET N-CH 500V 80A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V |
товар відсутній |
|
 |
IXFN80N50 | Виробник : IXYS |
Discrete Semiconductor Modules 500V 80A |
товар відсутній |
|
|
|
IXFN80N50 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Pulsed drain current: 320A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 380nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |