Технічний опис IXFN80N50P IXYS
Description: MOSFET N-CH 500V 66A SOT227B, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 700W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V.
Інші пропозиції IXFN80N50P за ціною від 1647.45 грн до 2677.83 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFN80N50P | IXYS |
 Description: MOSFET N-CH 500V 66A SOT227BDrain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| IXFN80N50P |
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Виробник: IXYS
Description: MOSFET N-CH 500V 66A SOT227B
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Description: MOSFET N-CH 500V 66A SOT227B
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2677.83 грн |
| 10+ | 1920.08 грн |
| 100+ | 1647.45 грн |