Технічний опис IXFN82N60P
- MOSFET, N, SOT-227B
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:600V
- Cont Current Id:82A
- On State Resistance:0.75ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:5V
- Case Style:ISOTOP
- Termination Type:Screw
- Junction to Case Thermal Resistance A:0.12`C/W
- Max Voltage Vds:600V
- N-channel Gate Charge:240nC
- No. of Pins:4
- Power Dissipation Pd:1040W
- Typ Capacitance Ciss:23000pF
- Max Reverse RecoveryTime, trr:200ns
- Transistor Case Style:ISOTOP
Інші пропозиції IXFN82N60P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFN82N60P | Виробник : Littelfuse | Trans MOSFET N-CH Si 600V 72A 4-Pin SOT-227B |
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IXFN82N60P | Виробник : Littelfuse | Trans MOSFET N-CH Si 600V 72A 4-Pin SOT-227B |
товар відсутній |
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IXFN82N60P | Виробник : Littelfuse | Trans MOSFET N-CH Si 600V 72A 4-Pin SOT-227B |
товар відсутній |
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IXFN82N60P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 72A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 75mΩ Pulsed drain current: 200A Power dissipation: 1.04kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±40V Mechanical mounting: screw кількість в упаковці: 1 шт |
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IXFN82N60P | Виробник : IXYS |
Description: MOSFET N-CH 600V 72A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V |
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IXFN82N60P | Виробник : IXYS | Discrete Semiconductor Modules DIODE Id82 BVdass600 |
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IXFN82N60P | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 72A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 75mΩ Pulsed drain current: 200A Power dissipation: 1.04kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±40V Mechanical mounting: screw |
товар відсутній |