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| 10+ | 553.40 грн |
| 100+ | 358.83 грн |
| 500+ | 352.57 грн |
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Технічний опис IXFP20N85X IXYS
Description: MOSFET N-CH 850V 20A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 850 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Power Dissipation (Max): 540W (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IXFP20N85X
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXFP20N85X | Виробник : Littelfuse Inc. |
 Description: MOSFET N-CH 850V 20A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 850 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
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IXFP20N85X | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 20A Power dissipation: 540W Case: TO220AB On-state resistance: 0.33Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns Features of semiconductor devices: ultra junction x-class Gate charge: 63nC |
товару немає в наявності |