IXFP270N06T3 IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; TrenchT3™
Reverse recovery time: 47ns
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис IXFP270N06T3 IXYS
Description: MOSFET N-CH 60V 270A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V.
Інші пропозиції IXFP270N06T3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFP270N06T3 | Виробник : IXYS |
Description: MOSFET N-CH 60V 270A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V |
товару немає в наявності |
|
 |
IXFP270N06T3 | Виробник : IXYS |
MOSFETs 60V/270A TrenchT3 |
товару немає в наявності |
|
|
|
IXFP270N06T3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; TrenchT3™ Reverse recovery time: 47ns |
товару немає в наявності |