на замовлення 290 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 527.53 грн |
| 10+ | 445.71 грн |
| 50+ | 368.93 грн |
| 100+ | 322.98 грн |
| 250+ | 312.99 грн |
| 500+ | 278.36 грн |
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Технічний опис IXFP34N65X2M IXYS
Description: MOSFET N-CH 650V 34A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.5mA, Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V.
Інші пропозиції IXFP34N65X2M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFP34N65X2M | Виробник : Littelfuse |
 X2-Class HiperFETTM Power MOSFET |
товар відсутній |
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IXFP34N65X2M | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 164ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFP34N65X2M | Виробник : Littelfuse |
X2-Class Power MOSFET |
товар відсутній |
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IXFP34N65X2M | Виробник : IXYS |
Description: MOSFET N-CH 650V 34A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V |
товар відсутній |
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IXFP34N65X2M | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 164ns |
товар відсутній |