на замовлення 749 шт:
термін постачання 245-254 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 593.57 грн |
| 10+ | 584.33 грн |
| 50+ | 405.55 грн |
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Технічний опис IXFP34N65X3 IXYS
Description: MOSFET 34A 650V X3 TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 2.5mA, Supplier Device Package: TO-220-3 (IXFP), Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V.
Інші пропозиції IXFP34N65X3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IXFP34N65X3 | Виробник : Littelfuse |
 Discrete MOSFET 34A 650V X3 TO220 |
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IXFP34N65X3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFP34N65X3 | Виробник : IXYS |
Description: MOSFET 34A 650V X3 TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Supplier Device Package: TO-220-3 (IXFP) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V |
товар відсутній |
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IXFP34N65X3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
товар відсутній |