| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 352.76 грн |
| 10+ | 264.37 грн |
| 50+ | 205.03 грн |
| 100+ | 178.80 грн |
| 250+ | 164.30 грн |
| 500+ | 161.54 грн |
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Технічний опис IXFP36N20X3M IXYS
Description: MOSFET N-CH 200V 36A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220 Isolated Tab, Vgs(th) (Max) @ Id: 4.5V @ 500µA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Інші пропозиції IXFP36N20X3M
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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IXFP36N20X3M | IXYS |
Description: MOSFET N-CH 200V 36A TO220Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Isolated Tab Vgs(th) (Max) @ Id: 4.5V @ 500µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
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| IXFP36N20X3M |
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Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: MOSFET N-CH 200V 36A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.



