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IXFP5N100PM

IXFP5N100PM IXYS

littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp5n100pm_datasheet.pdf.pdf Виробник: IXYS
Description: MOSFET N-CH 1000V 2.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
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1+482.86 грн
50+ 371.2 грн
100+ 332.12 грн
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Технічний опис IXFP5N100PM IXYS

Description: MOSFET N-CH 1000V 2.3A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.

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IXFP5N100PM IXFP5N100PM Виробник : IXYS media-3319334.pdf MOSFET MSFT N-CH HIPERFET-POLAR
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