IXFP60N25X3 IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 587.05 грн |
| 3+ | 494.42 грн |
| 10+ | 405.51 грн |
| 50+ | 380.58 грн |
Відгуки про товар
Написати відгук
Технічний опис IXFP60N25X3 IXYS
Description: MOSFET N-CH 250V 60A TO220AB, Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB (IXFP), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Power Dissipation (Max): 320W (Tc).
Інші пропозиції IXFP60N25X3 за ціною від 341.72 грн до 761.91 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFP60N25X3 | IXYS |
Description: MOSFET N-CH 250V 60A TO220AB Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB (IXFP) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Power Dissipation (Max): 320W (Tc) |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
|
||||||
 |
IXFP60N25X3 | IXYS |
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET |
на замовлення 225 шт: термін постачання 21-30 дні (днів) |
|
| IXFP60N25X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 60A TO220AB
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB (IXFP)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 320W (Tc)
Description: MOSFET N-CH 250V 60A TO220AB
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB (IXFP)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 320W (Tc)
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 611.21 грн |
| IXFP60N25X3 |
|
Виробник: IXYS
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 761.91 грн |
| 10+ | 431.08 грн |
| 100+ | 341.72 грн |