Технічний опис IXFP8N85XM Littelfuse
Description: MOSFET N-CH 850V 8A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220 Isolated Tab, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V.
Інші пропозиції IXFP8N85XM
| Фото | Назва | Виробник | Інформація |
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Ціна |
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| IXFP8N85XM | Виробник : Littelfuse |
 Trans MOSFET N-CH 850V 8A 3-Pin(3+Tab) OVERMOLDED TO-220 |
товару немає в наявності |
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| IXFP8N85XM | Виробник : IXYS |
IXFP8N85XM THT N channel transistors |
товару немає в наявності |
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IXFP8N85XM | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 850V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220 Isolated Tab Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V |
товару немає в наявності |
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IXFP8N85XM | Виробник : IXYS |
MOSFET MSFT N-CH ULTRA JNCT X3&44 |
товару немає в наявності |