Технічний опис IXFQ170N15X3 IXYS
Description: DISCMSFT NCHULTRJNCTN X3CLASS TO, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V.
Інші пропозиції IXFQ170N15X3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IXFQ170N15X3 | Виробник : Littelfuse Inc. |
 Description: DISCMSFT NCHULTRJNCTN X3CLASS TOPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V |
товару немає в наявності |
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IXFQ170N15X3 | Виробник : IXYS |
MOSFETs TO3P 150V 170A N-CH X3CLASS |
товару немає в наявності |