Продукція > IXYS > IXFR14N100Q2
IXFR14N100Q2

IXFR14N100Q2 IXYS


IXFR14N100Q2.pdf Виробник: IXYS
Description: MOSFET N-CH 1000V 9.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IXFR14N100Q2 IXYS

Description: MOSFET N-CH 1000V 9.5A ISOPLS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V.

Інші пропозиції IXFR14N100Q2

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IXFR14N100Q2 IXFR14N100Q2 Виробник : IXYS ixys_s_a0008595590_1-2272820.pdf MOSFET 14 Amps 1000V
товар відсутній