Технічний опис IXFR180N15P Littelfuse
Description: MOSFET N-CH 150V 100A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 90A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V.
Інші пропозиції IXFR180N15P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| IXFR180N15P | Виробник : IXYS |
 IXFR180N15P THT N channel transistors |
товару немає в наявності |
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IXFR180N15P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 150V 100A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 90A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V |
товару немає в наявності |
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IXFR180N15P | Виробник : IXYS |
MOSFETs 94 Amps 150V 0.011 Rds |
товару немає в наявності |