IXFR24N90P IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 230W
Gate charge: 130nC
кількість в упаковці: 1 шт
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Технічний опис IXFR24N90P IXYS
Description: MOSFET N-CH 900V 13A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Інші пропозиції IXFR24N90P
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXFR24N90P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 900V 13A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
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IXFR24N90P | Виробник : IXYS |
MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds |
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IXFR24N90P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 13A Case: ISOPLUS247™ On-state resistance: 0.46Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 230W Gate charge: 130nC |
товару немає в наявності |