IXFR26N100P IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 197nC
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Polarisation: unipolar
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Технічний опис IXFR26N100P IXYS
Description: MOSFET N-CH 1000V 15A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 290W (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IXFR26N100P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFR26N100P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 15A ISOPLUS247 Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS247™ Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
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IXFR26N100P | Виробник : IXYS |
MOSFETs 26 Amps 1000V 0.39 Rds |
товару немає в наявності |