Технічний опис IXFR32N80P Littelfuse
Description: MOSFET N-CH 800V 20A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 16A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V.
Інші пропозиції IXFR32N80P
Фото | Назва | Виробник | Інформація |
Доступність |
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IXFR32N80P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube On-state resistance: 0.29Ω Drain current: 20A Drain-source voltage: 800V Power dissipation: 300W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXFR32N80P | Виробник : IXYS |
Description: MOSFET N-CH 800V 20A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 16A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V |
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IXFR32N80P | Виробник : IXYS | MOSFET 20 Amps 800V 0.29 Rds |
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IXFR32N80P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube On-state resistance: 0.29Ω Drain current: 20A Drain-source voltage: 800V Power dissipation: 300W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Type of transistor: N-MOSFET |
товар відсутній |