IXFR44N50Q3

Виробник: IXYS
Description: MOSFET N-CH 500V 25A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

Виробник: IXYS
MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/25A

Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Gate charge: 93nC
On-state resistance: 154mΩ
Power dissipation: 300W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET