IXFR55N50 IXYS
Виробник: IXYS
Description: MOSFET N-CH 500V 48A ISOPLUS247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-247-3
Part Status: Obsolete
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
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Технічний опис IXFR55N50 IXYS
Description: MOSFET N-CH 500V 48A ISOPLUS247, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Mounting Type: Through Hole, Package / Case: TO-247-3, Part Status: Obsolete, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 4.5V @ 8mA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V.
