Технічний опис IXFR80N50P Littelfuse
Description: MOSFET N-CH 500V 45A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 40A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V.
Інші пропозиції IXFR80N50P
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IXFR80N50P | Виробник : Littelfuse |
 Trans MOSFET N-CH Si 500V 45A 3-Pin(3+Tab) ISOPLUS 247 |
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IXFR80N50P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 72mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFR80N50P | Виробник : IXYS |
Description: MOSFET N-CH 500V 45A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 40A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V |
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IXFR80N50P | Виробник : IXYS |
MOSFET 500V 80A |
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IXFR80N50P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 72mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced |
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