IXFT140N20X3HV Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Description: MOSFET N-CH 200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1078.30 грн |
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Технічний опис IXFT140N20X3HV Littelfuse Inc.
Description: MOSFET N-CH 200V 140A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V.
Інші пропозиції IXFT140N20X3HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFT140N20X3HV | Виробник : Littelfuse |
 Trans MOSFET N-CH 200V 140A 3-Pin(2+Tab) TO-268HV |
товару немає в наявності |
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IXFT140N20X3HV | Виробник : Littelfuse |
Trans MOSFET N-CH 200V 140A 3-Pin(2+Tab) TO-268HV |
товару немає в наявності |
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IXFT140N20X3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO268 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 127nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; X3-Class Reverse recovery time: 90ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFT140N20X3HV | Виробник : IXYS |
MOSFETs TO268 200V 140A N-CH X3CLASS |
товару немає в наявності |
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IXFT140N20X3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO268 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 127nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; X3-Class Reverse recovery time: 90ns |
товару немає в наявності |