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Технічний опис IXFT150N25X3HV IXYS
Description: MOSFET N-CH 250V 150A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V.
Інші пропозиції IXFT150N25X3HV за ціною від 1091.31 грн до 1974.09 грн
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IXFT150N25X3HV | Виробник : IXYS |
 Description: MOSFET N-CH 250V 150A TO268HVPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V |
на замовлення 519 шт: термін постачання 21-31 дні (днів) |
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IXFT150N25X3HV | Виробник : Littelfuse |
Trans MOSFET N-CH 250V 150A 3-Pin(2+Tab) TO-268HV |
товару немає в наявності |
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| IXFT150N25X3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Case: TO268HV Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: HiPerFET™; X3-Class Gate charge: 154nC Reverse recovery time: 140ns On-state resistance: 9mΩ Drain current: 150A Gate-source voltage: ±20V Power dissipation: 735W Pulsed drain current: 300A |
товару немає в наявності |