на замовлення 750 шт:
термін постачання 350-359 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1484.84 грн |
| 10+ | 1164.18 грн |
| 510+ | 989.74 грн |
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Технічний опис IXFT150N30X3HV IXYS
Description: MOSFET N-CH 300V 150A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V.
Інші пропозиції IXFT150N30X3HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFT150N30X3HV | Виробник : Littelfuse |
 Trans MOSFET N-CH 300V 150A 3-Pin(2+Tab) TO-268HV |
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IXFT150N30X3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 890W Case: TO268 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 167ns кількість в упаковці: 1 шт |
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IXFT150N30X3HV | Виробник : IXYS |
Description: MOSFET N-CH 300V 150A TO268HV Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
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IXFT150N30X3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 890W Case: TO268 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 167ns |
товар відсутній |