IXFT16N80P

IXFT16N80P Littelfuse Inc.


Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH16N80P-Datasheet.PDF?assetguid=56D03F87-B6BD-4132-A722-EC1F53FA6923
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 800V 16A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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Технічний опис IXFT16N80P Littelfuse Inc.

Description: MOSFET N-CH 800V 16A TO268, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 460W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.

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IXFT16N80P IXFT16N80P Виробник : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFT16N80P_Datasheet.PDF MOSFETs 16 Amps 800V 0.6 Rds
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