| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1890.27 грн |
| 10+ | 1491.72 грн |
| 120+ | 1121.80 грн |
| 510+ | 1061.74 грн |
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Технічний опис IXFT170N25X3HV IXYS
Description: MOSFET N-CH 250V 170A TO268HV, Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-268HV (IXFT), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 960W (Tc).
Інші пропозиції IXFT170N25X3HV
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFT170N25X3HV | Littelfuse Inc. |
Description: MOSFET N-CH 250V 170A TO268HV Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-268HV (IXFT) Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 960W (Tc) |
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В кошику од. на суму грн. |
| IXFT170N25X3HV |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 250V 170A TO268HV
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268HV (IXFT)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 960W (Tc)
Description: MOSFET N-CH 250V 170A TO268HV
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268HV (IXFT)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 960W (Tc)
товару немає в наявності
В кошику
од. на суму грн.