IXFT24N80P Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 800V 24A TO268
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 650W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Відгуки про товар
Написати відгук
Технічний опис IXFT24N80P Littelfuse Inc.
Description: MOSFET N-CH 800V 24A TO268, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 650W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V.
Інші пропозиції IXFT24N80P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFT24N80P | Виробник : IXYS |
 MOSFETs 24 Amps 800V 0.4 Rds |
товару немає в наявності |
|
 |
IXFT24N80P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO268 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |