IXFT30N85XHV IXYS
Виробник: IXYSDescription: MOSFET N-CH 850V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268 (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1019.71 грн |
| 10+ | 902.25 грн |
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Технічний опис IXFT30N85XHV IXYS
Description: MOSFET N-CH 850V 30A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V, Power Dissipation (Max): 695W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-268 (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V.
Інші пропозиції IXFT30N85XHV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFT30N85XHV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns Mounting: SMD Reverse recovery time: 160ns Power dissipation: 695W Features of semiconductor devices: ultra junction x-class Case: TO268HV Kind of package: tube Gate charge: 68nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 850V Type of transistor: N-MOSFET On-state resistance: 0.23Ω кількість в упаковці: 1 шт |
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IXFT30N85XHV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns Mounting: SMD Reverse recovery time: 160ns Power dissipation: 695W Features of semiconductor devices: ultra junction x-class Case: TO268HV Kind of package: tube Gate charge: 68nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 850V Type of transistor: N-MOSFET On-state resistance: 0.23Ω |
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