IXFT50N30Q3

IXFT50N30Q3 Littelfuse


media.pdf Виробник: Littelfuse
Trans MOSFET N-CH 300V 50A 3-Pin(2+Tab) TO-268
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Технічний опис IXFT50N30Q3 Littelfuse

Description: MOSFET N-CH 300V 50A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 25 V.

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IXFT50N30Q3 IXFT50N30Q3 Виробник : IXYS IXFH50N30Q3_IXFT50N30Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Power dissipation: 690W
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Drain current: 50A
Drain-source voltage: 300V
Gate charge: 65nC
Kind of channel: enhanced
Kind of package: tube
кількість в упаковці: 1 шт
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IXFT50N30Q3 IXFT50N30Q3 Виробник : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_50n30q3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 25 V
товар відсутній
IXFT50N30Q3 IXFT50N30Q3 Виробник : IXYS media-3322723.pdf MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A
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IXFT50N30Q3 IXFT50N30Q3 Виробник : IXYS IXFH50N30Q3_IXFT50N30Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Power dissipation: 690W
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Drain current: 50A
Drain-source voltage: 300V
Gate charge: 65nC
Kind of channel: enhanced
Kind of package: tube
товар відсутній