IXFT50N85XHV IXYS
Виробник: IXYS
Description: MOSFET N-CH 850V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Description: MOSFET N-CH 850V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
на замовлення 1259 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1230.15 грн |
30+ | 958.77 грн |
120+ | 902.36 грн |
510+ | 767.44 грн |
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Технічний опис IXFT50N85XHV IXYS
Description: MOSFET N-CH 850V 50A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V.
Інші пропозиції IXFT50N85XHV за ціною від 761.9 грн до 1349.99 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXFT50N85XHV | Виробник : IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET |
на замовлення 304 шт: термін постачання 21-30 дні (днів) |
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IXFT50N85XHV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns Mounting: SMD Case: TO268HV Polarisation: unipolar Kind of channel: enhanced Drain current: 50A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 890W Kind of package: tube Reverse recovery time: 218ns Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Drain-source voltage: 850V кількість в упаковці: 1 шт |
товар відсутній |
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IXFT50N85XHV | Виробник : Littelfuse | Trans MOSFET N-CH 850V 50A 3-Pin(2+Tab) D3PAK |
товар відсутній |
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IXFT50N85XHV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns Mounting: SMD Case: TO268HV Polarisation: unipolar Kind of channel: enhanced Drain current: 50A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 890W Kind of package: tube Reverse recovery time: 218ns Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Drain-source voltage: 850V |
товар відсутній |