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Технічний опис IXFT6N100F IXYS
Description: MOSFET N-CH 1000V 6A TO268, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268, Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc).
Інші пропозиції IXFT6N100F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFT6N100F | Виробник : IXYS |
Description: MOSFET N-CH 1000V 6A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-268 Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
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