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IXFT88N30P-TRL IXYS


Виробник: IXYS
Description: MOSFET N-CH 300V 88A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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Технічний опис IXFT88N30P-TRL IXYS

Description: MOSFET N-CH 300V 88A TO268, Packaging: Tape & Reel (TR), Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.

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IXFT88N30P-TRL IXFT88N30P-TRL Виробник : IXYS Littelfuse_Discrete_MOSFETs_N-Channel_HiPerFETs_IX-1622626.pdf MOSFET IXFT88N30P TRL
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