на замовлення 300 шт:
термін постачання 357-366 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 782 грн |
10+ | 661.04 грн |
30+ | 521.41 грн |
120+ | 478.68 грн |
270+ | 450.64 грн |
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Технічний опис IXFT96N20P IXYS
Description: MOSFET N-CH 200V 96A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Інші пропозиції IXFT96N20P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFT96N20P | Виробник : Littelfuse | Trans MOSFET N-CH 200V 96A 3-Pin(2+Tab) TO-268 |
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IXFT96N20P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268 Mounting: SMD Power dissipation: 600W Gate charge: 145nC Polarisation: unipolar Drain current: 96A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: TO268 On-state resistance: 24mΩ кількість в упаковці: 1 шт |
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IXFT96N20P | Виробник : IXYS |
Description: MOSFET N-CH 200V 96A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
товар відсутній |
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IXFT96N20P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268 Mounting: SMD Power dissipation: 600W Gate charge: 145nC Polarisation: unipolar Drain current: 96A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: TO268 On-state resistance: 24mΩ |
товар відсутній |