на замовлення 26 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1154.41 грн |
| 10+ | 1053.31 грн |
| 30+ | 777.62 грн |
| 60+ | 763.64 грн |
| 120+ | 703.31 грн |
| 270+ | 654.76 грн |
| 510+ | 651.08 грн |
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Технічний опис IXFX120N30T IXYS
Description: MOSFET N-CH 300V 120A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Інші пропозиції IXFX120N30T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFX120N30T | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 960W Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 265nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFX120N30T | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 300V 120A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
товару немає в наявності |
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IXFX120N30T | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 960W Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 265nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |