Технічний опис IXFX150N15
Description: MOSFET N-CH 150V 150A PLUS247, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 4V @ 8mA, Power Dissipation (Max): 560W (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Інші пропозиції IXFX150N15
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IXFX150N15 | IXYS |
Description: MOSFET N-CH 150V 150A PLUS247Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PLUS247™-3 Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
|
IXFX150N15 | IXYS |
MOSFETs 150 Amps 150V 0.0125 Rds |
товару немає в наявності |
В кошику од. на суму грн. |
| IXFX150N15 |
![]() |
Виробник: IXYS
Description: MOSFET N-CH 150V 150A PLUS247
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 150V 150A PLUS247
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IXFX150N15 |
![]() |
Виробник: IXYS
MOSFETs 150 Amps 150V 0.0125 Rds
MOSFETs 150 Amps 150V 0.0125 Rds
товару немає в наявності
В кошику
од. на суму грн.




