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IXFX170N20P IXYS
Виробник: IXYSDescription: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 1268.86 грн |
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Технічний опис IXFX170N20P IXYS
Description: MOSFET N-CH 200V 170A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V.
Інші пропозиції IXFX170N20P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFX170N20P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™ Mounting: THT Power dissipation: 1.25kW Gate charge: 185nC Polarisation: unipolar Drain current: 170A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: PLUS247™ On-state resistance: 14mΩ кількість в упаковці: 1 шт |
товар відсутній |
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IXFX170N20P | Виробник : IXYS |
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IXFX170N20P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™ Mounting: THT Power dissipation: 1.25kW Gate charge: 185nC Polarisation: unipolar Drain current: 170A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: PLUS247™ On-state resistance: 14mΩ |
товар відсутній |