Технічний опис IXFX210N30X3 Littelfuse
Description: MOSFET N-CH 300V 210A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V.
Інші пропозиції IXFX210N30X3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXFX210N30X3 | Виробник : Littelfuse |
 Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 247 |
товару немає в наявності |
|
|
|
IXFX210N30X3 | Виробник : Littelfuse |
Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 247 |
товару немає в наявності |
|
 |
IXFX210N30X3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 190ns Kind of package: tube кількість в упаковці: 1 шт |
товару немає в наявності |
|
 |
IXFX210N30X3 | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 300V 210A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V |
товару немає в наявності |
|
 |
IXFX210N30X3 | Виробник : IXYS |
MOSFETs PLUS247 300V 210A N-CH X3CLASS |
товару немає в наявності |
|
|
|
IXFX210N30X3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 190ns Kind of package: tube |
товару немає в наявності |