IXFX250N10P IXYS

Description: MOSFET N-CH 100V 250A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 1250W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.