IXFX320N17T2 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 170V 320A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V
Description: MOSFET N-CH 170V 320A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1592.42 грн |
| 30+ | 1390.57 грн |
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Технічний опис IXFX320N17T2 Littelfuse Inc.
Description: MOSFET N-CH 170V 320A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V, Power Dissipation (Max): 1670W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 170 V, Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V.
Інші пропозиції IXFX320N17T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXFX320N17T2 | Виробник : Littelfuse |
 Trans MOSFET N-CH 170V 320A 3-Pin(3+Tab) PLUS 247 |
товару немає в наявності |
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 |
IXFX320N17T2 | Виробник : Littelfuse |
Trans MOSFET N-CH 170V 320A 3-Pin(3+Tab) PLUS 247 |
товару немає в наявності |
|
|
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IXFX320N17T2 | Виробник : Littelfuse |
Trans MOSFET N-CH 170V 320A 3-Pin(3+Tab) PLUS 247 |
товару немає в наявності |
|
 |
IXFX320N17T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 320A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 5.2mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFX320N17T2 | Виробник : IXYS |
MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET |
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IXFX320N17T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 320A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 5.2mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |