Технічний опис IXFX32N80P Littelfuse
Description: MOSFET N-CH 800V 32A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V.
Інші пропозиції IXFX32N80P
Фото | Назва | Виробник | Інформація |
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IXFX32N80P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Drain current: 32A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.27Ω Power dissipation: 830W Gate charge: 150nC Polarisation: unipolar кількість в упаковці: 1 шт |
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IXFX32N80P | Виробник : IXYS |
Description: MOSFET N-CH 800V 32A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V |
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IXFX32N80P | Виробник : IXYS | MOSFET 32 Amps 800V 0.27 Rds |
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IXFX32N80P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Drain current: 32A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.27Ω Power dissipation: 830W Gate charge: 150nC Polarisation: unipolar |
товар відсутній |