IXFX32N90P Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 900V 32A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 10600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Package / Case: TO-247-3 Variant
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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Технічний опис IXFX32N90P Littelfuse Inc.
Description: MOSFET N-CH 900V 32A PLUS247-3, Input Capacitance (Ciss) (Max) @ Vds: 10600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 6.5V @ 1mA, Power Dissipation (Max): 960W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Package / Case: TO-247-3 Variant, Packaging: Tube, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.
Інші пропозиції IXFX32N90P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXFX32N90P | Виробник : IXYS |
 MOSFETs Polar HiPerFETs MOSFET w/Fast Diode |
товару немає в наявності |
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IXFX32N90P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™ Polarisation: unipolar Gate charge: 215nC On-state resistance: 0.3Ω Drain current: 32A Power dissipation: 960W Drain-source voltage: 900V Case: PLUS247™ Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |